SD can support the TFT process using IGZO, IZO or LTPS on glass or PI substrate for OLED and micro-LED displays.
2. Metal and ITO/IZO deposition and patterning : glass wafer. Wafer PI/Glass (Mo, Al, Cu, ITO/IZO, a-Si:H, p-i-n a-Si:H)
SD can support deposition of Mo, Al, Cu, ITO, IZO, a-Si:H, p+a-Si:H, n+ a-Si:H and patterning by photolithography.
3. LTPO, a-Si:H TFT backplane for display and sensor
SD can support the TFT backplane process for display and sensors using LTPS Oxide or LTPO TFTs.
4. Micropatterning – Glass or Flexible, Minimum resolution : 1um
SD can support the micro-patterning of metal and semiconductor films down to 1 um width and spacing.
5. AMOLED, u-LED driving board
SD has AMOLED and u-LED driving technologies based on FPGA using the source drivers. Integrated gate driver and external gate drivers can be supported.
6. TFT backplane for QDLED, Micro-LED and OLED
SD can support the process of manufacturing display backplanes using Oxide, LTPS, and LTPO TFTs for QD-LED, Micro-LED, and OLED panels
Service
![그림123](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림123.jpg)
Model : FPA-3000 iw
i-line stepper
Substrate : 8” flat type wafer
![그림124](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림124.jpg)
mark-7
film thickness : 1.3um
Non uniformity : 1.5%
![그림125](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림125.jpg)
Model : Centura PVD(DC sputtering)
Substrate : 8” flat type wafer
공정내용: Mo, Al, Cu, IZO, ITO, IGZO
![그림126](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림126.jpg)
Model : AMAT P-5000
PECVD_Plasma-enhanced chemical vapor deposition
Substrate : 8” flat type wafer
공정 내용 : SiO2, SiNx, a-si, PIN
![그림127](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림127.jpg)
Model : AMAT P-5000
RIE_Reactive Ion Etching
Substrate : 8” flat type wafer
공정내용: SiO2, SiNx, Si, metal(Mo)
![그림128](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림128.jpg)
Model : DAS2000
Asher
Substrate : 8” flat type wafer
공정내용 : PR Strip
![그림129](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림129.jpg)
Model : DJ-833V
LP CVD
Substrate : 8” flat type wafer
공정내용 : a-si 증착
![그림130](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림130.jpg)
Model : DD-833V
Furnace
Substrate : 8” flat type wafer
공정내용 : N2 annealing
![그림131](http://silicondisplay.co.kr/wp-content/uploads/2023/06/그림131.jpg)
Model : E-1000
Implant
Substrate : 8” flat type wafer
공정내용 : ion doping